Semiconductor material and method for forming the same and thin film transistor

ABSTRACT

A semiconductor material and a method for forming the same, said semiconductor material having fabricated by a process comprising irradiating a laser beam or a high intensity light equivalent to a laser beam to an amorphous silicon film containing therein carbon, nitrogen, and oxygen each at a concentration of 5×10 19  atoms·cm −3  or lower, preferably 1×10 19  atoms·cm −3  or lower, without melting the amorphous silicon film. The present invention provides thin film semiconductors having high mobility at an excellent reproducibility, said semiconductor materials being useful for fabricating compact thin film semiconductor devices such as thin film transistors improved in device characteristics.

This is a Divisional application of Ser. No. 07/853,690, filed Mar. 17, 1992. Now U.S. Pat. No. 5,313,076.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor material, e.g., containing silicon as the major component. More particularly, the present invention relates to a thin film silicon semiconductor material improved in properties and a process for fabricating the same. The semiconductor material according to the present invention enables fabrication of thin film semiconductor devices such as thin film transistors having excellent device characteristics.

2. Description of the Prior Art

Non-crystalline semiconductor materials (the so-called amorphous semiconductors) and polycrystalline semiconductor materials have been heretofore used for the fabrication of thin film semiconductor devices such as thin film field effect transistors and the like. The term “amorphous materials” as referred herein signifies not only the materials having a structural disordering in the strict sense of atomic level, but also includes those having a short range ordering for a distance of about several nanometers. More concretely, “amorphous materials” include silicon materials having an electron mobility of 10 cm²/V·s or lower and materials having a carrier mobility lowered to 1% or less of the intrinsic carrier mobility of the corresponding semiconductor material.

The use of an amorphous semiconductor such as amorphous silicon (a-Si) and amorphous germanium (a-Ge) in the fabrication of a semiconductor device is advantageous in that the process can be conducted at a relatively low temperature of 400° C. or even lower. Thus, much attention is paid now to a process using an amorphous material, because such a process is regarded as promising for the fabrication of liquid crystal displays and the like, to which a high temperature process cannot be applied.

However, a pure amorphous semiconductor has an extremely low carrier mobility (electron mobility and hole mobility). Thus, pure amorphous semiconductors are seldom applied as they are, for example, to channel-forming areas of thin film transistors (TFTs). In general, the pure amorphous semiconductor materials are subjected to the irradiation of a high energy beam such as a laser beam or a light emitted from a xenon lamp, so that they may be once molten to recrystallize and thereby be modified into a crystalline semiconductor material having an improved carrier mobility. Such a treatment of high energy light beam irradiation is referred hereinafter collectively to as “laser annealing”. It should be noted, however, that the high energy beam not necessary be a laser beam, and included in the high intensity beam is, for example, a powerful light emitted from a flash lamp which has a similar effect on the semiconductor material as the laser beam irradiation.

Generally, however, the semiconductor materials heretofore obtained by laser annealing are still low in the carrier mobility as compared with those of single crystal semiconductor materials. In the case of a silicon film, for example, the highest reported electron mobility is 200 cm²/V·s at best, which is a mere one seventh of the electron mobility of a single silicon, 1350 cm²/V·s. Moreover, the semiconductor characteristics (mainly mobility) of the semiconductor material thus obtained by the laser annealing process suffers poor reproducibility and also scattering of the mobility values over the single film. Those disadvantages lead to a low product yield of semiconductor devices having a plurality of elements fabricated on a single plane.

SUMMARY OF THE INVENTION

An object of the present invention is to provide a semiconductor material having a high mobility and a method for forming the same with excellent reproducibility. More specifically, an object of the present invention is to provide a process in which the problems of the conventional laser annealing process are overcome, and to provide, accordingly, a practically feasible thin film semiconductor material improved in characteristics.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a graph showing the relation between the center wavenumber of the Raman peak (Raman shift; taken in the abscissa) and the electron mobility (the ordinate) of a laser-annealed silicon film. The oxygen concentration of the film is found to be 2×10²¹ atoms·cm⁻³;

FIG. 2 is a graph showing the relation between the center wavenumber of the Raman peak (Raman shift; taken in the abscissa) and the electron mobility (the ordinate) of laser-annealed silicon films with varying oxygen concentration;

FIG. 3 is a graph showing the relation between the ratio of the full band width at half maximum (FWHM) of the Raman peak for a laser-annealed silicon film to the FWHM of the Raman peak for a single crystal silicon (FWHM ratio; taken in the abscissa) and the electron mobility (the ordinate), for laser-annealed silicon films with varying oxygen concentration;

FIG. 4 is a graph showing the relation between the peak intensity ratio (Ia/Ic; taken in the abscissa) and the electron mobility (the ordinate) for laser-annealed silicon films with varying oxygen concentration, where Ia represents the Raman peak intensity (of the peak at a wavenumber of about 480 cm⁻¹) for the amorphous component of the laser-annealed silicon film, and Ic represents the Raman peak intensity (at about 521 cm⁻¹) for the single crystal silicon;

FIG. 5 is a graph showing a position-dependent change of FWHM of the Raman peak for channel-forming areas of field effect transistors, where, the abscissa is X/L with L representing the channel length, and the ordinate is FWHM; and

FIG. 6(A)-6(C) shows a process for fabricating a field effect transistor.

DETAILED DESCRIPTION OF THE INVENTION

Raman spectroscopy is an effective method for evaluating the crystallinity of a material, and it has been used with the purpose of quantitatively evaluating the crystallinity of a semiconductor film fabricated by a laser annealing process. During an extensive study on the laser annealing process conducted by the present inventors, it has been found that the center wavenumber, as well as the width, the height, etc., of the Raman peak of a laser-annealed semiconductor film is closely related with the properties of the semiconductor film.

For instance, the Raman peak at 521 cm⁻¹ for a single crystal silicon was observed on a laser-annealed silicon film to be shifted to a shorter wavenumber (longer wavelength). It has been also found that the center wavenumber of this Raman peak is strongly correlated with the carrier mobility of the silicon film obtained by laser annealing.

Referring to FIG. 1, an example which illustrates the relation above is explained. FIG. 1 relates the center wavenumber of the Raman peak (abscissa) to the electron mobility (ordinate) of a film obtained by laser-annealing an amorphous silicon film. The electron mobility was obtained by measuring the capacitance-voltage (C-V) characteristics on a TFT having fabricated from the silicon film. From FIG. 1, it can be read that the electron mobilities for those having a Raman peak center of 515 cm⁻¹ or higher behave quite differently from the mobilities of those having a Raman peak center below 515 cm⁻¹. More specifically, it can be seen that the Raman peak center is more sensitive to the change in electron mobility in the peak center wavenumber region of 515 cm⁻¹ or shorter; beyond this wavenumber, in contrast, a little shift of Raman peak to higher wavenumber side signifies a large increase in electron mobility.

This phenomena is clearly an evidence of the presence of two phases. According to the study of the present inventors, the phase observed with a Raman peak at 515 cm⁻¹ or lower is assumed as a phase which has achieved atomic ordering in the solid phase without undergoing melting, whereas the phase having a Raman peak of 515 cm⁻¹ or higher is assumably a phase having solidified from a liquid phase which has once experienced melting by laser annealing.

The center wavenumber of the Raman peak was 521 cm⁻¹ at maximum, and the highest observed electron mobility was about 200 cm²/V·s. However, it was difficult to obtain such silicon films of high electron mobility with favorable reproducibility. Even though the laser annealing were to be conducted under apparently the same conditions, most of the resulting silicon films suffered a low electron mobility of less than 100 cm²/V·s, probably due to a slight difference in the crystalline state. Those films with low electron mobilities yielded Raman peaks with their center at significantly lower wavenumber than 521 cm⁻¹, mostly at 515 cm⁻¹ or lower.

The fact that 200 pieces of amorphous silicon film having laser-annealed under the same conditions fail to yield the same mobility is another evidence which illustrates the problem of low reproducibility of high electron mobility. Among the 200 pieces subjected to laser annealing, 3 pieces yielded a mobility of 200 cm²/V·s or higher, 11 pieces yielded a mobility between 100 cm²/V·s and 200 cm²/V·s (200 cm²/V·s excluded), 61 pieces yielded a mobility between 10 cm²/V·s and 100 cm²/V·s (100 cm²/V·s excluded), and 125 pieces yielded a mobility of less than 10 cm²/V·s.

The reason for such a scattering in the values of electron mobility is believed to be due to the fluctuation in laser output per pulse, and to the extremely narrow range of the optimum condition for the laser annealing. According to an observation, for example, a too high laser output produces amorphous materials instead of effecting favorable recrystallization.

In addition to the reasons above, the present inventors took notice of foreign atoms such as oxygen, nitrogen, and carbon atoms having incorporated in the film. In the laser-annealed silicon films investigated and yielding the results shown in FIG. 1, oxygen atoms were found to be present in the film at a concentration of 2×10²¹ atoms·cm⁻³. These oxygen atoms are believed to have been incorporated in some way during the deposition of the amorphous silicon film. Nitrogen and carbon atoms were present in trace amounts. Thus, an amorphous silicon film was deposited using gas materials of high purity while maintaining the deposition chamber, the evacuation systems, and the like at a sufficiently clean state. Under such a highly clean condition, little amount of oxygen was added intentionally to the atmosphere to control the amount of the oxygen incorporated into the film, and the resulting film was laser-annealed to see the relationship between the center value of the Raman peak and the electron mobility.

The concentration of elements other than silicon, such as oxygen, nitrogen, and carbon, is referred hereinafter to the concentration of those elements at the central portion of the film. The concentration of the elements in the central region is taken into account because despite the extremely high concentration of those elements in the portion near the substrate or at the vicinity of the surface, the impurity elements in those portions are believed to have little influence in the carrier mobility which is to be considered in the present invention. In general, within a coating, the portion low in concentration of those foreign elements exists at the central portion of the film, and it is believed that the central portion of the film plays an important role in a semiconductor device such as a field effect transistor. Accordingly, “a concentration of a foreign element” referred simply herein is defined as the concentration at the central portion of the film.

The influence of oxygen concentration on the relation between the electron mobility and the Raman peak center is illustrated in FIG. 2. Obviously, the electron mobility is significantly improved by reducing the oxygen concentration of the film. The same tendency was observed for both carbon and nitrogen. As a possible explanation for the results obtained above, the present inventors propose two mechanisms as follows. In the case of laser annealing a film containing oxygen at a high concentration, the portions low in oxygen atoms serve as crystal nuclei to effect crystal growth during the melting and recrystallization of the film; the oxygen atoms incorporated into the film are driven to the periphery with the growth of the crystal, and are precipitated at the grain boundaries. Thus, the film as a whole which results from such a process is lowered in mobility due to the barriers created at the grain boundaries. Another possible explanation the present inventors propose is that the oxygen atoms or the areas rich in oxygen (in general, those areas are believed to have a higher melting temperature) function as crystal nuclei to effect crystal growth. Accordingly, the size of the individual crystals becomes smaller with increasing population of the oxygen atoms. This leads to a lower crystallinity because of the crystals having grown into smaller size, which in consequence give a lower mobility.

At any rate, decreasing the oxygen concentration in the film is effective for significantly increasing the electron mobility thereof by laser annealing. For example, an electron mobility as high as 1000 cm²/V·s was obtained by controlling the oxygen concentration to 1×10¹⁹ atoms·cm⁻³. Similar results were obtained by lowering the concentrations of nitrogen and carbon atoms as well. Also, a similar tendency was observed on hole mobilities.

Furthermore, as in the case of FIG. 1, the curve relating the electron mobility to the Raman peak position shows typically a knickpoint (i.e., a bent) irrespective of the oxygen concentration. Referring to FIG. 2, the present inventors denoted the region at the right hand side (the side higher in wavenumber) of the broken lines as a melting and crystallizing region. This is because a film falling in this region is surmised that it has undergone melting and recrystallization upon laser annealing. A high mobility was obtained on films falling in this region.

However, there was no particular improvement with respect to reproducibility. For example, only 9 pieces out of 100 amorphous silicon films having fabricated with the oxygen concentration controlled to 1×10¹⁹ cm⁻³ or lower yielded an electron mobility higher than 1000 cm²/V·s, despite the laser annealing was conducted on each film under nominally the same conditions. Upon observation of the laser-annealed films, many were found to recover the amorphous state due to the failure of crystallization with too high laser output.

As described above, it is quite difficult to obtain practically films falling in the melting and crystallizing region, i.e., the right hand side of the broken line shown in FIG. 2. Moreover, it is not favorable to try to obtain films in this region, because failure more likely results from such an attempt.

A semiconductor material in accordance with the present invention preferably contains oxygen, nitrogen and carbon at a concentration of 5×10¹⁹ atoms·cm⁻³ or less respectively therein.

A semiconductor material in accordance with the present invention has a Raman peak center preferably at a Raman shift of 517 cm⁻¹ or less, more preferably 512 cm⁻¹ or less.

The present inventors found that a high mobility can be obtained by reducing the concentrations of oxygen, nitrogen, and carbon. For example, as shown in FIG. 2, a high electron mobility of 100 cm²/V·s was obtained by simply reducing the oxygen concentration to 1×10¹⁹ cm⁻³ or lower. In addition, a mobility in this level can be readily obtained; for example, 72 films out of 100 amorphous silicon films having laser-annealed under the same condition yielded a mobility not lower than 80 cm²/V·s.

The present inventors assume that the amorphous silicon film attains, without undergoing melting, some long-range periodicity in this region ascribed to a progressive lattice ordering in a solid phase or during the intermediate state between solid and liquid phases. Accordingly, the present inventors denoted this region as a “solid phase ordering region”. Despite it is yet to give a definite reason for the high mobility of the films falling in this solid phase ordering region with low concentrations of oxygen, nitrogen, and carbon, a possible explanation the present inventors provide is as follows.

While it is true that the films falling in this solid phase ordering region do not experience a melting process, the atoms in the film move upon absorption of the light energy or the thermal energy supplied by the laser beam to attain a state of lowest energy, i.e., a crystalline state. However, since the film does not undergo a molten state, a completely crystalline state can not be achieved. Thus, some regions having an ordering at a range of from several to several tens of nanometer develop within an amorphous matrix. Such a state is clearly distinguished from a polycrystalline state which is achieved through an ordinary molten state. That is, in the ordinary process of melting and crystallization, crystal nuclei which form in the liquid phase collide with each other during their growth into larger crystals. Such collision interfaces become the grain boundaries and consequently barriers for the carriers, because lattice defects and impurities concentrate, ionization occurs to polarize, etc.

In the case of solid phase ordering, on the other hand, no precipitation of impurities occur in the grain boundary since no collision occurs between the crystals. Thus, the barriers between the ordered regions such as the crystals are assumably very low. The presence of a foreign element which impairs the semiconductor characteristics is, then, the determining factor of the electric properties of a semiconductor having obtained by a solid phase ordering.

The fact above can be clearly read from FIG. 2. For example, a film having an oxygen concentration of 1×10¹⁹ cm⁻³ or lower gives an electron mobility of about 100 cm²/V·s. Referring to the center wavelength of the Raman peak, however, it can be seen that the peak is located far from that of the single crystal silicon, 521 cm⁻¹. This fact shows that the crystallinity of this film is not necessarily approaching that of a single crystal silicon. This point will be further clarified by other data which will be given later.

A similar tendency was observed by the present inventors on the relation between the full band width at half maximum (FWHM) of the Raman peak and the electron mobility. The relation is shown in FIG. 3. The abscissa is the full band width at half maximum ratio (FWHM ratio), which is defined herein as a ratio of the FWHM of a Raman peak obtained on a laser-annealed film to that obtained on a single crystal silicon. A smaller FWHM ratio closer to unity represents a film having a structure similar to that of a single crystal silicon. Referring to FIG. 3, it can be seen that the FWHM ratio becomes closer to 1 with increasing electron mobility if films of equal oxygen concentration are compared. Also, as was the case above in the relation between the mobility and the Raman peak center, a melting and crystallizing region (the left hand side region with respect to the broken line) and a solid phase ordering region (the right hand side of the broken line) are observed to be present, and the electron mobility increased with lowering oxygen concentration in the film; similar results were again obtained for nitrogen and carbon atoms. That is, a higher electron mobility was obtained with decreasing concentration of foreign atoms. Similarly, the same tendency was observed for hole mobilities.

Furthermore, the present inventors found that the electron mobility can be intimately correlated with the peak intensity of a peak assigned to the amorphous component within the film. FIG. 4 is a graph showing the relation between a ratio which the present inventors define as a peak intensity ratio (Ia/Ic; taken as the abscissa), and the electron mobility for laser-annealed silicon films with varying oxygen concentration, where Ia represents the Raman peak intensity (of the peak at a wavenumber of about 480 cm⁻¹) for the amorphous component of the laser-annealed silicon film, and Ic represents the Raman peak intensity (at about 521 cm⁻¹) for the single crystal silicon. With respect to the films in falling in the solid phase ordering region (the right hand side of the broken line), the electron mobility increased with decreasing oxygen concentration of the film. A similar tendency was observed on the individual effect of nitrogen and carbon concentrations. Furthermore, the same tendency was observed for hole mobility. The present inventors denote again this region at the left hand side of the broken lines shown in FIG. 4 as the melting and crystallizing region, as was the case in FIGS. 2 and 3.

In conclusion from the foregoing description, a higher carrier mobility can be obtained by decreasing the amounts of oxygen, nitrogen, and carbon incorporated into the film. More specifically, the present inventors have found that, by reducing concentration of each of the foreign atoms to 5×10¹⁹ atoms·cm⁻³ or lower, more preferably to 1×10¹⁹ atoms·cm⁻³ or lower, a high electron mobility can be obtained at a maximum probability of a high 80%, provided that the film is subjected to a less speculative solid phase ordering process which give a higher product yield, instead of a melting process. More specifically, it was found that by the process above, an electron mobility of 50 cm²/V·s or higher can be obtained at a maximum probability of 80% on a silicon film by lowering the concentration of the foreign elements to 5×10¹⁹ atoms·cm⁻³ or lower, and that this can be further increased to a high 100 cm²/V·s by decreasing the foreign element concentration to 1×10¹⁹ atoms·cm⁻³. Furthermore, it was possible to obtain stably a hole mobility of from 30 to 80 cm²/V·s by a process similar to above.

As described in the foregoing, the carrier mobility of a film having brought into a particular solid phase ordering state (which is denoted as “semi-amorphous state” by the present inventors) can be increased by decreasing the concentrations of foreign atoms having incorporated in the film. To achieve this semi-amorphous state, it is requisite that the film does not undergo melting. Thus, in a process of long duration, the laser-irradiated portion must be maintained at a temperature not higher than the melting point of the semiconductor. In the case of silicon, for example, it requires heating at a temperature not higher than 1400° C. under the atmospheric pressure; in germanium, it should be heated to not higher than 1000° C. under the atmospheric pressure. However, in an extremely short period of, for example, 10 nsec as practiced in excimer lasers, a temperature as high as 2000° C. or even higher is achieved instantaneously and spectroscopically observed. Such a high temperature does not always cause melting of the film. Thus, a definition of a temperature in this case does not make sense.

In the present invention, the laser annealing is carried out in an atmosphere under atmospheric pressure or reduced pressure.

For example, a laser beam or a light equivalent to the laser beam is irradiated to an amorphous semiconductor containing therein carbon, nitrogen and oxygen at a concentration of 5×10¹⁹ atoms·cm⁻³ or less, preferably 1×10¹⁹ atoms·cm⁻³ or less, respectively to make order of the amorphous semiconductor higher.

As mentioned earlier, a high mobility can be obtained effectively by reducing the concentration of foreign atoms. In practice, however, it is difficult to control the concentration of the foreign atoms to a value as low as 1×10¹⁶ atoms·cm⁻³ and below, even if the laser annealing were to be carried out under an extremely high vacuum to a film containing the atoms at a very low concentration of 1×10¹⁶ atoms·cm⁻³ or lower. This is because the oxygen gas, nitrogen gas, water molecules, carbon dioxide gas, etc., which are present in the atmosphere in trace amounts are taken up in the film during the laser annealing. Otherwise, it is presumably due to the presence of a gas having adsorbed on the surface of the film, which is then trapped into the film during the laser annealing.

To circumvent the aforementioned difficulties, a particular fabrication process is requisite. One of such processes is to first cover the surface of an amorphous semiconductor film containing foreign atoms of oxygen, nitrogen, and carbon at an extremely low concentration of 10¹⁵ atoms·cm⁻³ or lower with a protective film such as of silicon oxide, silicon nitride, and silicon carbide, and then laser annealing the film under a high vacuum at a pressure of 10⁻⁴ Torr or lower. Such a process enables a semiconductor film having very high mobility, with extremely low concentrations for oxygen, nitrogen, and carbon. For example, a silicon film having an electron mobility of 300 cm²/V·s was obtained with each of the concentrations of carbon, nitrogen, and oxygen being controlled to 1×10¹⁵ atoms·cm⁻³ or lower.

The protective films, such as of silicon oxide, silicon nitride, and silicon carbide, can be favorably deposited on the surface of an amorphous semiconductor film by continuously depositing the amorphous film and the protective film in a same chamber. More specifically, a preferred process comprises, for example, depositing an amorphous semiconductor film in a chamber equipped with a single vacuum apparatus, using a chemical vapor deposition (CVD) process or a sputtering process, and then, in the same chamber, continuously depositing the protective film while maintaining the same previous atmosphere or by once evacuating the chamber to an extreme vacuum and then controlling the atmosphere to a one pertinent for the deposition of the protective film. However, to further improve the yield, the reproducibility, and the reliability of the products, it is preferred that independent chambers are provided so that the films are deposited separately therein, and that the amorphous film once deposited in a particular chamber is transferred to another chamber while maintaining the high vacuum. The selection of a particular film deposition process depends on the plant and equipment investment. At any rate, the important points to be assured are to sufficiently reduce the amount of oxygen, nitrogen, and carbon in the film and to avoid adsorption of gases on the surface of the amorphous semiconductor and at the boundary between said semiconductor and the protective film provided thereon. Even if an amorphous semiconductor film of high purity and a silicon nitride protective film thereon were to be formed, the carrier mobility would be impaired if the amorphous film were to be once exposed to the atmosphere. In general, such an amorphous film once exposed to air would yield a low carrier mobility even after laser annealing, and moreover, the probability to obtain a high mobility would be very low. This is believed due to the gas adsorbed on the surface of the amorphous semiconductor film which later diffuses into the film during the laser annealing process.

The protective film may be made from any material capable of transmitting a laser beam or a light equivalent to the laser beam, and usable are silicon oxide, silicon nitride, silicon carbide, and a material comprising a mixture thereof, which is represented by the chemical formula SiN_(x)O_(y)C_(z) (where, 0≦×≦4/3; 0≦y ≦2; 0≦z≦1; and 0≦3x+2y+4z≦4). Preferably, the thickness of the film is in the range of from 5 to 1000 nm.

In the foregoing description, it has been shown that a semiconductor film having a high carrier mobility can be obtained by reducing the concentrations of oxygen, nitrogen, and carbon of the amorphous semiconductor film and during the laser annealing process. The electron mobility and the hole mobility obtained therefrom are mere average values of the channel-forming area in the field effect transistors fabricated for the measurement purposes. Thus, those values fail to give the individual mobilities at particular minute portions within the channel-forming area. However, as was described referring to FIGS. 1 to 4 according to the present invention, it has been elucidated that the carrier mobility can be univocally defined from the parameters such as the wavenumber of the Raman peak center, the FWHM of the Raman peak, and the intensity of the Raman peak attributed to the amorphous content in contrast to that of the whole Raman peak. Thus, by the information available from Raman spectroscopy, it is possible to semi-quantitatively obtain the mobility of a minute area to which a direct measurement cannot be applied.

FIG. 5 is a graph showing a position-dependent change of FWHM of the Raman peak for laser-annealed channel-forming areas of field effect transistors whose electron mobilities were found to be 101 cm²/V·s in the case of a semi-amorphous silicon obtained through a solid phase ordering process, and 201 cm²/V·s in the case of a film obtained through melting. Referring to FIG. 5, the abscissa is the position of the channel forming area, X/L, with L being the channel length of 100 μm, and X being the coordinate of the channel forming area. Thus, X/L=0 corresponds to the boundary between the channel-forming area and the source area, X/L=1 represents the boundary between the channel forming area and the drain area, and X/L=0.5 indicates the center of the channel-forming area. It can be seen from FIG. 5 that the field effect transistor having an electron mobility of 101 cm²/V·s has a large FWHM with little fluctuation. The data is in agreement with the previous observations of the present authors referring to FIG. 3, i.e., that the crystallinity approaches to that of a single crystal with decreasing FWHM, and that thereby the electron mobility is increased with reducing FWHM. These data show, in addition, that the positional variation in FWHM (dependence of FWHM on position) is low and hence a uniform crystallinity is obtained over the whole film. The film yielded an oxygen concentration of about 1×10¹⁹ atoms·cm⁻³.

The channel-forming area of a field effect transistor having an electron mobility of 201 cm²/V·s also yielded an oxygen concentration of 1×10¹⁹ atoms·cm⁻³. As shown in FIG. 5, the FWHM is lowered over the whole area, and is largely dependent on the position. Moreover, some points yielded FWHM values comparable to, or even lower than that (4.5 cm⁻¹) of a single crystal silicon. Such a low FWHM is suggestive of a high electron mobility well comparable to that of a single crystal silicon at that point, and that a localized portion having a high crystallinity equal to that of a single crystal silicon is present. From the viewpoint of mass-production of devices, such a material having large local fluctuations is not favorable despite a high mobility. In the fabrication of compact devices, in particular, the inhomogeneity, which in larger devices was averaged and hence not problematic, becomes more apparent to considerably reduce the product yield.

In contrast to above, the film having an electron mobility of 101 cm²/V·s yields, as is shown in FIG. 5, that the FWHM generally has less positional dependence. Such a material is suitable for the mass production of devices with improved yield.

To achieve a high carrier mobility, not only the concentration of the foreign atoms should be lowered, but also the conditions for the laser annealing have to be optimized. The conditions for the laser annealing vary depending on the operating conditions of the laser (such as whether the laser is operated in a continuous mode or in a pulsed mode, the repetition cycle, beam intensity, and wavelength), and the coating. The lasers to be used in the process is selected from ultraviolet(UV)-emitting lasers such as the various types of excimer lasers, and lasers emitting light in the visible and infrared (IR) regions, such as a YAG laser. A suitable laser should be selected depending on the thickness of the film to be laser-annealed. In materials such as silicon and germanium, the laser annealing is effected at relatively shallow portions on the surface when a UV-emitting laser is used, because the materials have a short absorption length for UV light. On the other hand, because those materials have a longer absorption length for a light in the visible and IR regions, such a beam penetrate deep into the material to effect laser annealing of the inner portions.

In addition, a further annealing of a laser-annealed semiconductor film in hydrogen gas atmosphere in the temperature range of from 200 to 600° C. for a duration of from 10 minutes to 6 hours was effective to obtain a high carrier mobility at an improved reproducibility. This is presumably due to the dangling bonds which remain in the amorphous area or to the newly formed dangling bonds areas within the semiconductor, during the laser annealing for the solid phase ordering. Such dangling bonds then function as barriers to the carriers. If a considerable amount of oxygen, nitrogen, and carbon atoms were to be incorporated in the semiconductor, those foreign atoms may enter into the interstices of such dangling bonds; however, when the concentrations of oxygen, nitrogen, and carbon are extremely low as in the present case, the dangling bonds remain as they are and therefore require a further annealing in hydrogen atmosphere after the laser annealing.

The present invention is described in further detail below referring to non-limiting examples.

EXAMPLE 1

A planar TFT was fabricated and the electric characteristics thereof were evaluated. Referring to FIG. 6, the process for the fabrication thereof is described. First, an amorphous silicon film (an activation layer of the TFT) was deposited on a quartz substrate 601 at a thickness of about 100 nm by a conventional RF sputtering process, at a substrate temperature of 150° C. under an atmosphere consisting substantially of 100% argon at a pressure of 0.5 Pa. A 99.99% or higher purity argon gas was used alone, without adding other gases such as hydrogen. The sputtering was conducted at a power input of 200 W and an RF frequency of 13.56 MHz. The resulting film was etched into a 100 μm ×500 μm rectangle to obtain a desired amorphous silicon film 602.

The film was confirmed by secondary ion mass spectroscopy (SIMS) to contain each of oxygen, nitrogen, and carbon at a concentration of 10¹⁹ atoms·cm⁻³ or less.

The film was then placed in a vacuum vessel controlled to a vacuum of 10⁻⁵ Torr for laser annealing. A KrF excimer laser was operated at a pulse duration of 10 nsec, an irradiation energy of 200 mJ, and a pulse repetition of 50 shots, to effect laser annealing by irradiating a laser beam at a wavelength of 248 nm to the film.

A gate dielectric 603 was then deposited by sputtering on the surface of the thus obtained laser-annealed silicon film in an oxygen atmosphere, at a thickness of about 100 nm. The film-deposition was conducted at a substrate temperature of 150° C. and at an RF (13.5 MHz) power input of 400 W. The atmosphere was controlled to be substantially oxygen, and no other gas was intentionally added. The oxygen gas was of 99.9% or higher purity, and the pressure thereof was 0.5 Pa.

Then, a 200 nm thick aluminum film was deposited by a known vacuum deposition process, and was further subjected to a conventional dry etching process to remove the unnecessary portions to obtain a 100 μm wide gate 604. At this point, a photoresist 605 used in the dry etching process was left unremoved on the gate.

Boron ions were then doped to the whole structure other than the gate by ion implantation at a dopant concentration of 10¹⁴ cm⁻². In this case, the gate and the photoresist thereon were utilized as masks to avoid doping of boron ions to the portion under the gate. Thus were obtained impurity areas, i.e., a source area 606 and a drain area 607. The resulting structure is given in FIG. 6(B).

The resulting structure was then placed in a vacuum vessel controlled to a vacuum of 10⁻⁵ Torr for laser annealing. A KrF excimer laser was operated at a pulse duration of 10 nsec, an irradiation energy of 100 mJ, and a pulse repetition of 50 shots, to effect the film annealing by irradiating a beam at a wavelength of 248 nm. The impurity areas which were made amorphous by the ion doping were thus recrystallized.

The laser-annealed structure was thermally annealed further in hydrogen atmosphere. The substrate was placed in a chamber equipped with a vacuum-evacuating means. The chamber was first evacuated to a vacuum of 10⁻⁶ Torr using a turbo molecular pump, and this state was maintained for 30 minutes. Then a 99.99% or higher purity hydrogen gas was introduced to the chamber until the pressure was recovered to 100 Torr, to anneal the substrate at 300° C. for 60 minutes. The vessel was once evacuated to remove the adhered gases, water, and the like from the film, because it had been known empirically that a high mobility with favorable reproducibility cannot be obtained for the films having thermally annealed with those impurities being adhered thereto.

Finally, a 100 nm thick silicon oxide film provided on the top of the source and the drain areas was perforated to form thereon aluminum contacts 608 and 609. Thus was a complete field effect transistor obtained. A channel is located in the activation layer under the gate electrode between the source and the drain areas in the field effect transistor and comprises the intrinsic or substantially intrinsic semiconductor crystallized by the KrF excimer laser.

The measurement of C-V characteristics on this field effect transistor yielded an electron mobility of 98 cm²/V·s for the channel forming area. The threshold voltage was 4.8 V. The concentrations of oxygen, nitrogen, and carbon of this field effect transistor were each found by SIMS to be 1×10¹⁹ atoms·cm⁻³ or lower.

EXAMPLE 2

A planar TFT was fabricated and the electric characteristics thereof were evaluated. First, an amorphous silicon film containing phosphorus at a concentration of 3×10¹⁷ atoms·cm⁻³ was deposited on a quartz substrate at a thickness of about 100 nm by a conventional RF sputtering process. The amorphous silicon film having deposited at this thickness can be wholly annealed by a KrF laser beam at a wavelength of 248 nm. The RF sputtering was performed at a substrate temperature of 150° C. under an atmosphere consisting substantially of 100% argon at a pressure of 0.5 Pa. A 99.99% or higher purity argon gas was used alone, without adding other gases such as hydrogen. The sputtering was conducted at a power input of 200 W and an RF frequency of 13.56 MHz. The resulting film was etched into a 100 μm×500 μm rectangle to obtain the desired amorphous silicon film.

The film was confirmed by secondary ion mass spectroscopy (SIMS) to contain each of oxygen, nitrogen, and carbon at a concentration of 10¹⁹ atoms·cm⁻³ or less.

A gate dielectric was then deposited by sputtering on the surface of the thus obtained silicon film in an oxygen atmosphere, at a thickness of about 100 nm. The film-deposition was conducted at a substrate temperature of 150° C. and at an RF (13.56 MHz) power input of 400 W. The atmosphere was controlled to be substantially oxygen, and no other gas was intentionally added. The oxygen gas was of 99.9% or higher purity, and the pressure thereof was 0.5 Pa.

Then, a 200 nm thick aluminum film was deposited by a known vacuum deposition process, and was further subjected to a conventional dry etching process to remove the unnecessary portions to obtain a gate at a width of 100 μm. At this point, a photoresist used in the dry etching process was left on the gate.

Boron ions were then doped to the whole structure except for the gate by ion implantation at a dopant concentration of 10¹⁴ cm⁻² In this case, the gate and the photoresist thereon were utilized as masks to avoid doping of boron ions to the portion under the gate. Thus were obtained impurity areas, i.e., a source area and a drain area, in the silicon film.

The resulting structure was then placed in a vacuum vessel controlled to a vacuum of 10⁻⁵ Torr for laser annealing. A KrF excimer laser was operated at a pulse duration of 10 nsec, an irradiation energy of 100 mJ, and a pulse repetition of 50 shots, to anneal the film by irradiating a beam at a wavelength of 248 nm from the back of the substrate. Thus was the amorphous silicon film converted into a semi-amorphous film. This process is different from that of EXAMPLE 1 in that the source or the drain area is imparted semi-amorphous simultaneously with the channel forming area. The instant process is therefore advantageous in that a favorable boundary with a continuous crystallinity can be obtained with less defects, as compared with the process of EXAMPLE 1 in which many defects were found to generate in the boundary between the source or drain area and the channel forming area.

The laser-annealed structure was thermally annealed further in hydrogen atmosphere. The substrate was placed in a chamber equipped with a vacuum-evacuating means. The chamber was first evacuated to a vacuum of 10⁻⁶ Torr using a turbo molecular pump, and then heated to 100° C. to maintain this state for 30 minutes. Then a 99.99% or higher purity hydrogen gas was introduced to the chamber until the pressure was recovered to 100 Torr, so that annealing of the substrate may be conducted then at 300° C. for 60 minutes. The vessel was once evacuated to remove the adhered gases, water, and the like from the film, because it had been known empirically that a high mobility with favorable reproducibility cannot be obtained for the films having thermally annealed with those impurities being adhered thereto.

Finally, a 100 nm thick silicon oxide film provided on the top of the source and the drain areas was perforated to form thereon aluminum contacts. Thus was the structure completed into a field effect transistor.

The measurement of C-V characteristics on this field effect transistor yielded an electron mobility of 112 cm²/V·s for the channel forming area. The threshold voltage was 3.9 V. The present field effect transistor yielded an improved (lower) threshold voltage as compared with that of the field effect transistor fabricated in EXAMPLE 1. This is assumed attributable to the simultaneous laser annealing of the impurity areas and the channel forming area, which might have crystallized uniformly at the same time by irradiating the laser beam from the back. Furthermore, the drain current ratio at the ON/OFF of the gate voltage was found to be 5×10⁶.

The concentrations of oxygen, nitrogen, and carbon of this field effect transistor were each found by SIMS to be 1×10¹⁹ atoms·cm⁻³ or lower. The Raman spectroscopy of the channel forming area resolved a Raman peak at a center wavenumber of 515 cm⁻¹, having a FWHM of 13 cm⁻¹. The presence of a once melted and recrystallized silicon was not observed, and the development of a semi-amorphous state was confirmed.

EXAMPLE 3

A planar TFT was fabricated and the electric characteristics thereof were evaluated. First, about 100 nm thick amorphous silicon film and a 10 nm thick silicon nitride coating thereon were continuously deposited on a quartz substrate having coated with a 10 nm thick silicon nitride coating by using a film-deposition apparatus having two chambers. The amorphous silicon film was deposited by a conventional sputtering method, and the silicon nitride film was deposited by a glow-discharge plasma chemical vapor deposition (CVD).

The substrate was set in a first pre-chamber which was heated to 200° C. and evacuated to a pressure of 10⁻⁶ Torr or lower for 1 hour. Separately, an air-tight first chamber, which is constantly controlled to a pressure of 10⁻⁴ Torr or lower except for the case of film deposition, was evacuated to 10⁻⁶ Torr. The substrate was transferred from the first pre-chamber to the first chamber and set therein, at which point the chamber was evacuated to 10⁻⁶ Torr or lower while maintaining the substrate and the target to a temperature of 200° C. for a duration of 1 hour. Then, argon gas was introduced into the chamber to generate an RF plasma to conduct film deposition by sputtering. A 99.9999% or higher purity silicon target containing 1 ppm of phosphorus was used for the target. The film deposition was conducted with the substrate temperature being maintained at 150° C., in an atmosphere consisting substantially of 100% argon gas at a pressure of 5×10⁻² Torr. No gases other than argon, such as hydrogen, was added intentionally. The argon gas used herein was of 99.9999% or higher purity. The sputtering was operated at an input power of 200 W and an RF frequency of 13.56 MHz.

Upon completion of the film deposition, the RF discharge was cut off, and while evacuating the first chamber to a vacuum of 10⁻⁶ Torr, an air-tight second pre-chamber, which is provided between the first and second chambers and is constantly maintained to a pressure of 10⁻⁵ Torr or lower, was vacuum-evacuated to 10⁻⁶Torr, so that the substrate may be transferred therein from the first chamber. Then, an air-tight second chamber, which is always maintained at a pressure of 10⁻⁴ Torr or lower except for the case of carrying out a film deposition, was evacuated to 10⁻⁶ Torr to set therein the substrate having transferred from the second pre-chamber. The substrate was kept at 200° C. in the second chamber, while the chamber was evacuated to maintain the substrate under a pressure of 10⁻⁶ Torr or lower for 1 hour.

Then, a gas mixture diluted with hydrogen and comprising a 99.9999% or higher purity ammonia gas and disilane (Si₂H₆) gas at a ratio of 3:2 was introduced in the second chamber to control the overall pressure to 10⁻¹ Torr. An RF current was applied to the chamber to generate a plasma therein, so that a silicon nitride film might be deposited on the substrate. The power input was 200 W, at a frequency of 13.56 MHz.

After completion of the film deposition, the RF discharge was cut off. While evacuating the second chamber to 10⁻⁶ Torr, a third pre-chamber, which is provided at one side of the second chamber and having a quartz window, was vacuum evacuated to 10⁻⁶ Torr, at which point the substrate was transferred from the second chamber to the third pre-chamber. Then, a KrF excimer laser was operated at a pulse duration of 10 nsec, an irradiation energy of 100 mJ, and a pulse repetition of 50 shots, so that a laser beam at a wavelength of 248 nm was irradiated to the film to effect the laser annealing. Thus was a semi-amorphous film obtained from the amorphous silicon film.

The process described above was particularly effective for improving the product yield. By thus conducting continuously the laser annealing from the point of film deposition without substantially disturbing the vacuum state, a high product yield can be achieved irrespective of the presence of a protective film on the amorphous film. Accordingly, the process is effective on the FETs described in EXAMPLES 1 and 2 as well, in which no protective films are provided. Assumably, the films are maintained free from adhesion of dusts and the like which function as nuclei for crystal growth, and from scratches and other defects; moreover, they are free from adsorption of water and gases which readily allow development of polycrystalline materials. Furthermore, such a process prevents exertion of a non-uniform stress on the film at the transfer from a vacuum state to a pressurized state under the atmosphere. Such a non-uniform stress causes microscopic change, protrusions, and the like to form on the surface of the film, which function as nuclei to develop a polycrystalline structure.

The process of continuously conducting the film deposition and the annealing thereof as described above, may be carried out in two ways. One is establishing a film-deposition chamber and separately a pre-chamber as described in the foregoing, and providing a window in the pre-chamber to effect the laser annealing through this window. The other process is similar to the first, except that the window is provided to the film-deposition chamber so that the laser annealing may be effected subsequently to the film deposition. The latter process, however, requires etching of the window to remove the coating having adhered during the film-deposition process, since the coating adhesions make the window translucent. Accordingly, the former process is favorable from the viewpoint of its applicability to mass production and the maintenance costs.

After the laser annealing is finished in the third pre-chamber, a dry nitrogen gas is introduced into the third pre-chamber to recover the atmospheric pressure. The substrate was then taken out from the third pre-chamber, and the silicon nitride film having deposited thereon was removed by a known dry etching process. The resulting silicon film was etched into a 100 μm×500 μm rectangular shape.

The concentrations of oxygen, nitrogen, and carbon of this field effect transistor were each 1×10¹⁶ atoms·cm⁻³ or lower, which were each confirmed by SIMS performed on a separate film fabricated by the same process.

A gate dielectric was then deposited on the surface of the thus obtained laser-annealed silicon film in an oxygen atmosphere by sputtering, at a thickness of about 100 nm. The film-deposition was conducted at a substrate temperature of 150° C. and at an RF (13.56 MHz) power input of 400 W. A 99.9999% or higher purity silicon oxide was used as the target for sputtering. The atmosphere was controlled to be substantially oxygen, and no other gas was intentionally added. The oxygen gas was of 99.999% or higher purity, and the pressure thereof was 5×10⁻² Torr.

Then, a 200 nm thick aluminum film was deposited by a known vacuum deposition process, and was further subjected to a conventional dry etching process to remove the unnecessary portions to obtain a gate at a width of 100 μm. At this point, a photoresist used in the dry etching process was left on the gate.

Boron ions were then doped to the whole structure except for the gate by ion implantation at a dopant concentration of 10¹⁴ cm². In this case, the gate and the photoresist thereon were utilized as masks to avoid doping of boron ions to the portion under the gate. Thus were obtained impurity areas, i.e., a source area and a drain area, in the silicon film.

The resulting structure was then placed in a vacuum vessel controlled to a vacuum of 10⁻⁵ Torr for laser annealing. A KrF excimer laser was operated at a pulse duration of 10 nsec, an irradiation energy of 50 mJ, and a pulse repetition of 50 shots, to anneal the film by irradiating a beam at a wavelength of 248 nm from the back of the substrate. Thus was a semi-amorphous film obtained from the silicon film having imparted amorphous by ion-doping.

The present process is similar to that described in EXAMPLE 1 in the point that the laser annealing is conducted in two steps, however, the present process is distinguishable from the previous in that the laser annealing is effected by irradiating the beam from the back of the substrate to form a continuous junction between the impurity regions and the channel forming area. Because despite a UV-emitting laser efficiently anneals the surface of the film, it frequently fails to anneal the portions deep inside the film, laser beam is irradiated first from the surface of the amorphous silicon film, and then from the back of the substrate, to obtain a continuous junction between the channel forming region and the impurity regions and to improve product yield.

Laser annealing by irradiation of an ultraviolet laser beam from the substrate surface is effective for the surface portion to which the ultraviolet laser beam is irradiated, and is not sufficiently effective for deeper portion, that is, there is a high possibility that a high mobility cannot be obtained in the deeper portion. Thereby production yield may be lowered. Laser irradiation from the back of the substrate is not sufficiently effective for obtaining a high mobility in a portion of the activation layer in contact with the gate electrode. Therefore, laser annealing is carried out twice in this embodiment, that is, the first laser annealing is carried out by irradiating a laser beam to the amorphous silicon film from the surface side thereof and the second laser annealing is carried out by irradiating a laser beam to the film from the back of the substrate, to increase the production yield and to establish a continuous junction between the channel forming area and the impurity areas.

The laser-annealed structure was thermally annealed further in hydrogen atmosphere. The substrate was placed in a chamber equipped with a vacuum-evacuating means. The chamber was first evacuated to a vacuum of 10⁻⁶ Torr using a turbo molecular pump, and then heated to 100° C. to maintain this state for 30 minutes. Then a 99.99% or higher purity hydrogen gas was introduced to the chamber until the pressure was recovered to 100 Torr, so that annealing of the substrate may be conducted then at 300° C. for 60 minutes. The vessel was once evacuated to remove the adhered gases, water, and the like from the film, because it had been known empirically that a high mobility with favorable reproducibility cannot be obtained for the films having thermally annealed with those impurities being adhered thereto.

Finally, a 100 nm thick silicon oxide film provided on the top of the source and the drain areas was perforated to form thereon aluminum contacts. Thus was the structure completed into a field effect transistor.

One hundred field effect transistors above were fabricated. The measurement of C-V characteristics on these field effect transistors yielded an average electron mobility of 275 cm²/V·s for the channel forming area. The threshold voltage was 4.2 V in average. The drain current ratio at the ON/OFF of the gate voltage was found to be 8×10⁶ in average. Each of the field effect transistors thus fabricated was checked whether it had favorable characteristics on electron mobility, threshold voltage, and drain current ratio. The standard values for the electron mobility, the threshold voltage, and the drain current ratio were set to 100 cm²/V·s, 5.0 V, and 1×10⁶, respectively. Eighty-one out of 100 field effect transistors were found as being favorable.

The concentrations of oxygen, nitrogen, and carbon of these field effect transistors evaluated as favorable were each found by SIMS to be 1×10¹⁶ atoms·cm⁻³ or lower.

EXAMPLE 4

A planar TFT was fabricated and the electric characteristics thereof were evaluated. First, about 100 nm thick amorphous silicon film and a 10 nm thick silicon nitride coating thereon were continuously deposited on a quartz substrate having coated with a 10 nm thick silicon nitride coating by using a film-deposition apparatus having two chambers. The amorphous silicon film was deposited by a conventional sputtering method, and the silicon nitride film was deposited by a glow-discharge plasma chemical vapor deposition (CVD).

The substrate was set in a first pre-chamber which was heated to 200° C. and evacuated to a pressure of 10⁻⁶ Torr or lower for 1 hour. Separately, an air-tight first chamber, which is constantly controlled to a pressure of 10⁻⁴ Torr or lower except for the case of film deposition, was evacuated to 10⁻⁶ Torr. The substrate was transferred from the first pre-chamber to the first chamber and set therein, at which point the chamber was evacuated to 10⁻⁶ Torr or lower while maintaining the substrate and the target to a temperature of 200° C. for a duration of 1 hour. Then, argon gas was introduced into the chamber to generate an RF plasma to conduct film deposition by sputtering. A 99.9999% or higher purity silicon target containing 1 ppm of phosphorus was used for the target. The film deposition was conducted with the substrate temperature being maintained at 150° C., in an atmosphere consisting substantially of 100% argon gas at a pressure of 5×10⁻² Torr. No gases other than argon, such as hydrogen, was added intentionally. The argon gas used herein was of 99.9999% or higher purity. The sputtering was operated at an input power of 200 W and an RF frequency of 13.56 MHz.

Upon completion of the film deposition, the RF discharge was cut off, and while evacuating the first chamber to a vacuum of 10⁻⁶ Torr, an air-tight second pre-chamber, which is provided between the first and second chambers and is constantly maintained to a pressure of 10⁻⁵ Torr or lower, was vacuum-evacuated to 10⁻⁶ Torr, so that the substrate may be transferred therein from the first chamber. Then, an air-tight second chamber, which is always maintained at a pressure of 10⁻⁴ Torr or lower except for the case of carrying out a film deposition, was evacuated to 10⁻⁶ Torr to set therein the substrate having transferred from the second pre-chamber. The substrate was kept at 200° C. in the second chamber, while the chamber was evacuated to maintain the substrate under a pressure of 10⁻⁶ Torr or lower for 1 hour.

Then, a gas mixture diluted with hydrogen and comprising a 99.9999% or higher purity ammonia gas and disilane (Si₂H₆) gas at a ratio of 3:2 was introduced in the second chamber to control the overall pressure to 10⁻¹ Torr. An RF current was applied to the chamber to generate a plasma therein, so that a silicon nitride film might be deposited on the substrate. The power input was 200 W, at a frequency of 13.56 MHz.

After completion of the film deposition, the RF discharge was cut off. While evacuating the second chamber to 10⁻⁶ Torr, a third pre-chamber, which is provided at one side of the second chamber and having a quartz window, was vacuum evacuated to 10⁻⁶ Torr, at which point the substrate was transferred from the second chamber to the third pre-chamber. Then, argon gas having a purity of 99.9999% or higher was introduced into the third pre-chamber to a pressure of 5 atm. Then, a KrF excimer laser was operated at a pulse duration of 10 nsec, an irradiation energy of 100 mJ, and a pulse repetition of 50 shots, so that a laser beam at a wavelength of 248 nm was irradiated to the film to effect the laser annealing. Thus was a semi-amorphous film obtained from the amorphous silicon film.

The process described above was particularly effective for improving the product yield. By thus conducting continuously the laser annealing from the point of film deposition without substantially disturbing the vacuum state, a high product yield can be achieved irrespective of the presence of a protective film on the amorphous film. Accordingly, the process is effective on the FETs described in EXAMPLES 1 and 2 as well, in which no protective films are provided. Assumably, the films are maintained free from adhesion of dusts and the like which function as nuclei for crystal growth, and from scratches and other defects. Furthermore, in the process according to this EXAMPLE, the laser annealing conducted under a pressurized condition avoids generation of microscopic bubbles inside the film, and thereby prevents the film to develop a polycrystalline structure, because such bubbles serve as nuclei for the formation of such a structure.

The process of continuously conducting the film deposition and the annealing thereof as described above, may be carried out in two ways. One is establishing a film-deposition chamber and separately a pre-chamber as described in the foregoing, and providing a window in the pre-chamber to effect the laser annealing through this window. The other process is similar to the first, except that the window is provided to the film-deposition chamber so that the laser annealing may be effected subsequently to the film deposition. The latter process, however, requires etching of the window to remove the coating having adhered during the film-deposition process, since the coating adhesions make the window translucent. Accordingly, the former process is favorable from the viewpoint of its applicability to mass production and the maintenance costs.

After the laser annealing is finished in the third pre-chamber, a dry nitrogen gas is introduced into the third pre-chamber to recover the atmospheric pressure. The substrate was then taken out from the third pre-chamber, and the silicon nitride film having deposited thereon was removed by a known dry etching process. The resulting silicon film was etched into a 10 μm×1 μm rectangular shape.

The concentrations of oxygen, nitrogen, and carbon of this field effect transistor were each 1×10¹⁶ atoms·cm⁻³ or lower, which were each confirmed by SIMS performed on a separate film fabricated by the same process.

A gate dielectric was then deposited on the surface of the thus obtained laser-annealed silicon film in an oxygen atmosphere by sputtering, at a thickness of about 100 nm. The film-deposition was conducted at a substrate temperature of 150° C. and at an RF (13.56 MHz) power input of 400 W. A 99.9999% or higher purity silicon oxide was used as the target for sputtering. The atmosphere was controlled to be substantially oxygen, and no other gas was intentionally added. The oxygen gas was of 99.999% or higher purity, and the pressure thereof was 5×10⁻² Torr.

Then, a 200 nm thick aluminum film was deposited by a known vacuum deposition process, and was further subjected to a conventional dry etching process to remove the unnecessary portions to obtain a gate at a gate electrode width (channel length) of 0.5 μm and at a channel width of 1 μm. At this point, a photoresist used in the dry etching process was left on the gate.

Boron ions were then doped to the whole structure except for the gate by ion implantation at a dopant concentration of 10¹⁴ cm². In this case, the gate and the photoresist thereon were utilized as masks to avoid doping of boron ions to the portion under the gate. Thus were obtained impurity areas, i.e., a source area and a drain area, in the silicon film.

The resulting structure was then placed in a vacuum vessel controlled to a vacuum of 10⁻⁵ Torr for laser annealing. A KrF excimer laser was operated at a pulse duration of 10 nsec, an irradiation energy of 50 mJ, and a pulse repetition of 50 shots, to anneal the film by irradiating a beam at a wavelength of 248 nm from the back of the substrate. Thus was a semi-amorphous film obtained from the silicon film having imparted amorphous by ion-doping.

The present process is similar to that described in EXAMPLE 1 in the point that the laser annealing is conducted in two steps, however, the present process is distinguishable from the previous in that the laser annealing is effected by irradiating the beam from the back of the substrate to form a continuous junction between the impurity regions and the channel forming area. Because despite a UV-emitting laser efficiently anneals the surface of the film, it frequently fails to anneal the portions deep inside the film, laser beam is irradiated first from the surface of the amorphous silicon film, and then from the back of the substrate, to obtain a continuous junction between the channel forming region and the impurity regions and to improve product yield.

Laser annealing by irradiation of an ultraviolet laser beam from the substrate surface is effective for the surface portion to which the ultraviolet laser beam is irradiated, and is not sufficiently effective for deeper portion, that is, there is a high possibility that a high mobility cannot be obtained in the deeper portion. Thereby production yield may be lowered. Laser irradiation from the back of the substrate is not sufficiently effective for obtaining a high mobility in a portion of the activation layer in contact with the gate electrode. Therefore, laser annealing is carried out twice in this embodiment, that is, the first laser annealing is carried out by irradiating a laser beam to the amorphous silicon film from the surface side thereof and the second laser annealing is carried out by irradiating a laser beam to the film from the back of the substrate, to increase the production yield and to establish a continuous junction between the channel forming area and the impurity areas.

The laser-annealed structure was thermally annealed further in hydrogen atmosphere. The substrate was placed in a chamber equipped with a vacuum-evacuating means. The chamber was first evacuated to a vacuum of 10⁻⁶ Torr using a turbo molecular pump, and then heated to 100° C. to maintain this state for 30 minutes. Then a 99.99% or higher purity hydrogen gas was introduced to the chamber until the pressure was recovered to 100 Torr, so that annealing of the substrate may be conducted then at 300° C. for 60 minutes. The vessel was once evacuated to remove the adhered gases, water, and the like from the film, because it had been known empirically that a high mobility with favorable reproducibility cannot be obtained for the films having thermally annealed with those impurities being adhered thereto.

Finally, a 100 nm thick silicon oxide film provided on the top of the source and the drain areas was perforated to form thereon aluminum contacts. Thus was the structure completed into a field effect transistor.

One hundred field effect transistors above were fabricated. The measurement of C-V characteristics on these field effect transistors yielded an average electron mobility of 259 cm²/V·s for the channel forming area. The threshold voltage was 4.2 V in average. The drain current ratio at the ON/OFF of the gate voltage was found to be 8×10⁶ in average. Each of the field effect transistors thus fabricated was checked whether it had favorable characteristics on electron mobility, threshold voltage, and drain current ratio. The standard values for the electron mobility, the threshold voltage, and the drain current ratio were set to 100 cm²/V·s, 5.0 V, and 1×10⁶, respectively. Seventy-one out of 100 field effect transistors were found as being favorable. This example illustrates that the present invention is greatly effective for producing fine devices.

The concentrations of oxygen, nitrogen, and carbon of these field effect transistors evaluated as favorable were each found by SIMS to be 1×10¹⁶ atoms·cm⁻³ or lower.

As described in the foregoing, the present invention provides thin film semiconductors of high mobility at an excellent reproducibility. The description above was made mainly on the laser annealing of a semiconductor film having deposited on an insulator substrate made of quartz and the like. However, the present invention is not only limited thereto and can be applied to single crystal semiconductors such as single crystal silicon substrates which are used in, for example, monolithic integrated circuits (ICs). There should be noted, however, that it is not favorable to deposit a relatively thin amorphous film, i.e., a film as thin as to which laser annealing effectively take place, directly on a single crystal or polycrystalline substrate. This is because the substrate provides nuclei for the formation of a polycrystalline structure. However, if a sufficiently thick amorphous film were to be deposited on a single crystal or a polycrystalline substrate, the laser annealing has no effect to portions deep inside the amorphous film. Thus, a favorable semi-amorphous state is achieved. Such a problem can be circumvented, of course, if an amorphous material of silicon oxide, silicon nitride, etc., is formed on the surface of the single crystal or the polycrystalline substrate.

Furthermore, in addition to the silicon film which was described in great detail in the EXAMPLES, the present invention can be applied to a germanium film, silicon-germanium alloy films, or films of various other intrinsic semiconductor materials as well as compound semiconductor materials. As described hereinbefore, it should be further noted that the term “laser annealing”, which is used as a means of increasing the mobility of an amorphous film, refers inclusively to means in which a high density energy beam is used, such as a flash lamp annealing. Thus, it should be noted that a process using a high density energy beam for improving the crystallinity of a semiconductor material is within the scope of the present invention.

While the invention has been described in detail and with reference to specific embodiments thereof, it will be apparent to one skilled in the art that various changes and modifications can be made therein without departing from the spirit and scope thereof. 

What is claimed is:
 1. A method for forming a semiconductor device comprising the steps of: forming on a surface a semiconductor film comprising silicon and containing therein carbon, nitrogen and oxygen at a concentration of 5×10¹⁹ atoms/cm³ or less respectively; and crystallizing said semiconductor film by irradiating a pulsed laser light to said semiconductor film wherein said semiconductor film is maintained in a solid-state during the crystallizing step, wherein at least a channel forming region of said semiconductor film is irradiated with said pulsed laser light during said crystallizing step, and wherein the crystallized semiconductor film shows a Raman shift at a wave number of 517 cm⁻¹ or less.
 2. The method of claim 1 wherein said crystallizing step is sufficient to provide the semiconductor film with a peak of intensity of scattered light at a Raman shift of 515 cm⁻¹ or less.
 3. The method of claim 1 further comprising the step of subjecting the crystallized semiconductor film to thermal treatment in an atmosphere comprising hydrogen after said irradiating step.
 4. A method of manufacturing an insulated gate field effect transistor comprising the steps of: forming on a surface a semiconductor film containing therein carbon, nitrogen and oxygen at a concentration of 5×10¹⁹ atoms/cm³ or less respectively; forming a protective film comprising a material selected from the group consisting of silicon oxide, silicon nitride, silicon carbide and silicon nitride oxide on said semiconductor film; and irradiating said semiconductor film with a pulsed laser light through said protective film to crystallize said semiconductor film without melting, wherein at least a channel forming region of said semiconductor film is irradiated with said pulsed laser light during said irradiating step, and wherein the crystallized semiconductor film shows a Raman shift at a wave number of 517 cm⁻¹ or less.
 5. The method of claim 4 wherein said semiconductor film comprises silicon and said irradiating step is sufficient to provide the semiconductor film with a peak of intensity of scattered light at a Raman shift of 515 cm⁻¹ or less.
 6. The method of claim 4 wherein said pulsed laser light comprises an excimer laser pulse.
 7. The method of claim 4 further comprising the step of subjecting said crystallized semiconductor film to thermal treatment in an atmosphere comprising hydrogen after said irradiating step.
 8. A method of manufacturing an insulated gate field effect thin film transistor comprising the steps of: forming a non-single crystalline semiconductor layer on an insulating surface of a substrate; irradiating said non-single crystalline semiconductor layer with a pulsed laser light to crystallize said semiconductor layer without melting said non-single crystalline semiconductor layer; and then forming a channel region of said transistor within the crystallized semiconductor layer after the irradiating step, wherein said non-single crystalline semiconductor layer contains carbon, nitrogen and oxygen at a concentration of 5×10¹⁹ atoms/cm³ or less respectively, wherein at least said channel region of said transistor is irradiated with said pulsed laser light during said irradiating step, and wherein the crystallized semiconductor layer shows a Raman shift at a wave number of 517 cm⁻¹ or less.
 9. The method of claim 8 further comprising the step of heat treating the crystallized semiconductor layer in a hydrogen atmosphere after the step of irradiation.
 10. The method of claim 8 wherein said semiconductor layer is exposed to said pulsed light through a protective layer provided on said non-single crystalline semiconductor layer.
 11. The method of claim 10 wherein said protective layer comprises a material selected from the group consisting of silicon oxide, silicon nitride, and silicon carbide.
 12. The method of claim 8 wherein said non-single crystalline semiconductor has an amorphous structure before the step of irradiation.
 13. The method of claim 8 wherein said non-single crystalline semiconductor layer comprises silicon and said irradiating is sufficient to provide the crystallized semiconductor layer with a peak of intensity of scattered light at a Raman shift of 515 cm⁻¹ or less.
 14. The method of claim 10, wherein said protective layer comprises a mixture of silicon oxide, silicon nitride and silicon carbide.
 15. The method of claim 1 wherein said semiconductor layer is thermally annealed in a hydrogen atmosphere after the step of crystallization.
 16. The method of claim 1 wherein said semiconductor film contains carbon, nitrogen and oxygen at a concentration of 1×10¹⁹ atoms·cm⁻³ or less.
 17. The method of claim 4 wherein said semiconductor film contains carbon, nitrogen and oxygen at a concentration of 1×10¹⁹ atoms·cm⁻³ or less.
 18. The method of claim 8 wherein said non-single crystalline semiconductor film contains carbon, nitrogen and oxygen at a concentration of 1×10¹⁹ atoms/cm³ or less.
 19. The method of claim 1 wherein no precipitation of carbon, oxygen, and nitrogen occurs in grain boundaries of said semiconductor film during the crystallization.
 20. The method of claim 4 wherein no precipitation of carbon, oxygen, and nitrogen occurs in grain boundaries of said semiconductor film during the crystallization.
 21. The method of claim 8 wherein no precipitation of carbon, oxygen, and nitrogen occurs in grain boundaries of said semiconductor layer during the crystallization.
 22. A method for forming a semiconductor device comprising the steps of: forming a semiconductor layer comprising silicon on an insulating surface, said semiconductor layer containing therein carbon, nitrogen and oxygen at a concentration of 5×10¹⁹ atoms/cm³ or less respectively; and crystallizing said semiconductor layer by irradiating a pulsed laser light to said semiconductor layer, said semiconductor layer being maintained in a solid-state during the crystallizing step; wherein at least a channel forming region of said semiconductor layer is irradiated with said pulsed laser light during said crystallizing step, and wherein a full band width at half maximum (FWHM) of a Raman peak of the crystallized semiconductor layer is more than 10 cm⁻¹.
 23. The method of claim 22 wherein said semiconductor layer contains carbon, nitrogen and oxygen at a concentration of 1×10¹⁹ atoms/cm³ or less respectively.
 24. The method of claim 22 wherein no precipitation of carbon, oxygen, and nitrogen occurs in grain boundaries of said semiconductor layer during the crystallization.
 25. A method for forming a semiconductor device comprising the steps of: forming a semiconductor layer comprising silicon on an insulating surface, said semiconductor layer containing therein carbon, nitrogen and oxygen at a concentration of 5×10¹⁹ atoms/cm³ or less respectively; forming a protective film comprising a material expressed by a formula SiN_(x)O_(y)C_(z) where 0≦x≦4/3, 0≦y≦2, 0≦z≦1 and 0<3x+2y+4z≦4; and crystallizing said semiconductor layer by irradiating a pulsed laser light to said semiconductor layer, said semiconductor layer being maintained in a solid-state during the crystallizing step, wherein at least a channel forming region of said semiconductor layer is irradiated with said pulsed laser light during said crystallizing step, wherein a full band width at half maximum (FWHM) of a Raman peak of the crystallized semiconductor layer is more than 10 cm⁻¹, and wherein threshold voltage of said semiconductor device is 5.0 V or less and drain current ratio thereof is 1×10¹⁶ or more.
 26. The method of claim 25 wherein said semiconductor layer contains carbon, nitrogen and oxygen at a concentration of 1×10¹⁹ atoms/cm³ or less respectively.
 27. The method of claim 25 wherein no precipitation of carbon, oxygen, and nitrogen occurs in grain boundaries of said semiconductor layer during the crystallization.
 28. A method for forming a semiconductor device comprising the steps of: forming a semiconductor layer comprising silicon on an insulating surface, said semiconductor layer containing therein carbon, nitrogen and oxygen at a concentration of 5×10¹⁹ atoms/cm³ or less respectively; crystallizing said semiconductor layer by irradiating a pulsed laser light to said semiconductor layer, said semiconductor layer being maintained in a solid-state during the crystallizing step; and heat treating the crystallized semiconductor layer in hydrogen atmosphere, wherein at least a channel forming region of said semiconductor layer is irradiated with said pulsed laser light during said crystallizing step; wherein the crystallized semiconductor layer shows a Raman shift at a wave number of 517 cm⁻¹ or less, and wherein threshold voltage of said semiconductor device is 5.0 V or less and drain current ratio thereof is 1×10¹⁶ or more.
 29. The method of claim 28 wherein said semiconductor layer contains carbon, nitrogen and oxygen at a concentration of 1×10¹⁹ atoms/cm³ or less respectively.
 30. The method of claim 28 wherein said the crystallized semiconductor layer shows a Raman shift at a wave number of 515 cm⁻¹ or less.
 31. The method of claim 28 wherein the heat treating step is carried out at a temperature of 200 to 600° C.
 32. The method of claim 28 wherein no precipitation of carbon, oxygen, and nitrogen occurs in grain boundaries of said semiconductor layer during the crystallization.
 33. A method of manufacturing an insulated gate field effect thin film transistor comprising the steps of: forming a semiconductor layer on an insulating surface of a substrate; irradiating said semiconductor layer with a pulsed laser light to crystallize said semiconductor layer without melting said semiconductor layer; and then forming a channel region of said transistor within the crystallized semiconductor layer after the irradiating step, wherein said semiconductor layer contains carbon, nitrogen and oxygen at a concentration of 5×10¹⁹ atoms/cm³ or less respectively, wherein at least said channel region of said transistor is irradiated with said pulsed laser light during said irradiating step, and wherein a full band width at half maximum (FWHM) of a Raman peak of the crystallized semiconductor layer is more than 10 cm⁻¹.
 34. The method of claim 33 wherein said semiconductor layer contains carbon, nitrogen and oxygen at a concentration of 1×10 ¹⁹ atoms/cm³ or less respectively.
 35. The method of claim 33 wherein no precipitation of carbon, oxygen, and nitrogen occurs in grain boundaries of said semiconductor layer during the crystallization.
 36. A method of manufacturing an insulated gate field effect transistor comprising the following sequential steps of: forming a semiconductor layer on an insulating surface, said semiconductor layer containing carbon, nitrogen and oxygen at a concentration of 5×10¹⁹ atoms/cm³ or less respectively; irradiating said semiconductor layer with a pulsed laser light to crystallize said semiconductor layer; introducing a N or P-type conductivity impurity into said semiconductor layer to form source and drain regions; and annealing at least said source and drain regions in the crystallized semiconductor layer without melting the crystallized semiconductor layer, wherein at least said channel region of said semiconductor layer is irradiated with said pulsed laser light during said irradiating step; wherein a full band width at half maximum (FWHM) of a Raman peak of the crystallized semiconductor layer is more than 10 cm⁻¹.
 37. The method of claim 36 wherein said semiconductor layer contains carbon, nitrogen and oxygen at a concentration of 1×10¹⁹ atoms/cm³ or less respectively.
 38. The method of claim 36 wherein no precipitation of carbon, oxygen, and nitrogen occurs in grain boundaries of said semiconductor layer during the crystallization.
 39. A method of manufacturing an insulated gate field effect transistor comprising the following sequential steps of: forming a semiconductor layer on an insulating surface, said semiconductor layer containing carbon, nitrogen and oxygen at a concentration of 5×10¹⁹ atoms/cm³ or less respectively; irradiating said semiconductor layer with a pulsed laser light to crystallize said semiconductor layer; forming a protective layer comprising a material expressed by a formula SiN_(x)O_(y)C_(z) where 0≦x≦4/3, 0≦y≦2, 0≦z≦1 and 0<3x+2y+4z≦4, introducing a N or P-type conductivity impurity into said semiconductor layer to form source and drain regions; and annealing at least said source and drain regions in the crystallized semiconductor layer without melting the crystallized semiconductor layer, wherein at least said channel region of said semiconductor layer is irradiated with said pulsed laser light during said irradiating step, and wherein a full band width at half maximum (FWHM) of a Raman peak of the crystallized semiconductor layer is more than 10 cm⁻¹.
 40. The method of claim 39 wherein said semiconductor layer contains carbon, nitrogen and oxygen at a concentration of 1×10¹⁹ atoms/cm³ or less respectively.
 41. The method of claim 39 wherein no precipitation of carbon, oxygen, and nitrogen occurs in grain boundaries of said semiconductor layer during the crystallization.
 42. A method of manufacturing an insulated gate field effect transistor comprising the following sequential steps of: forming a semiconductor layer on an insulating surface, said semiconductor layer containing carbon, nitrogen and oxygen at a concentration of 5×10¹⁹ atoms/cm³ or less respectively; irradiating said semiconductor layer with a pulsed laser light to crystallize said semiconductor layer; introducing a N or P-type conductivity impurity into said semiconductor layer to form source and drain regions; and annealing at least said source and drain regions in the crystallized semiconductor layer without melting the crystallized semiconductor layer, heat treating the crystallized semiconductor layer in a hydrogen atmosphere, wherein at least a channel forming region of said semiconductor layer is irradiated with said pulsed laser light during said crystallizing step, and wherein the crystallized semiconductor layer shows a Raman shift at a wave number of 517 cm⁻¹ or less.
 43. The method of claim 42 wherein said semiconductor layer contains carbon, nitrogen and oxygen at a concentration of 1×10¹⁹ atoms/cm³ or less respectively.
 44. The method of claim 42 wherein said crystallized semiconductor layer shows a Raman shift at a wave number of 515 cm⁻¹ or less.
 45. The method of claim 42 wherein no precipitation of carbon, oxygen, and nitrogen occurs in grain boundaries of said semiconductor layer during the crystallization.
 46. A method for forming a semiconductor device comprising the steps of: forming a semiconductor layer on an insulating surface, said semiconductor layer containing therein carbon, nitrogen and oxygen at a concentration of 5×10¹⁹ atoms/cm³ or less respectively, crystallizing said semiconductor layer by irradiating a pulsed laser light to said semiconductor layer, said semiconductor layer being maintained in a solid-state during the crystallizing step, wherein the crystallized semiconductor layer shows a Raman shift at a wave number of 517 cm⁻¹ or less.
 47. The method of claim 46 wherein said semiconductor layer contains carbon, nitrogen and oxygen at a concentration of 1×10¹⁹ atoms/cm³ or less respectively.
 48. The method of claim 46 wherein said crystallized semiconductor layer shows a Raman shift at a wave number of 515 cm⁻¹ or less.
 49. The method of claim 46 wherein said pulsed laser light is a pulsed excimer laser light. 